Chi tiết sản phẩm

1. Improve the cathode emission materials and structure, so the electronic emission capability enhanced. At the same time , increase the area of anode metal plate to improve power of anode dissipation

2. Strictly control the size error of filament, anode and various key parts, and make sure that the product has good consistency.

3. Products burn-in under high voltage 600 v (burn-in time 2-3 times of ordinary products), long hour burn-in to allow less impurity and less intrinsic baseline noise, and more stable performance over long lapse of time.

4. Use gold-plated tube needle and upgrade to a stronger metal base, while improving the quality of the tube seat, the whole tube is more elegant and elegant.

5. The products are screened and tested with imported test system, and the Ia and Gm are used to match the products to ensure the stable and reliable product quality.

KT88

KT88 is a beam power tetreode, its anode limited dissipation power is 42W. In the audio amplifier, the power can be 100W when it is used as push-pull class AB1 with double tubes, it can also be used in electronic voltage regulator circuit. KT88 is similar with CV5220 and 6550,they can be replaced by each other.

Heater
UH………… 6.3 V
IH………… 1.6 A

Maximum Rating
————- –KT94 KT100 KT94 KT100
Ua……………… 800 800 800 800 V
Ug2………… 600 600 600 600 V
Ug1…………-200 -200 -200 -200 V
Pa………… 42 45 35 40 W
Pg2…… 8 8 6 6 W
Pa+g2… 46 49 40 45 W
Ik……………… 230 230 230 230 mA
Uh-k……… 200 200 250 250 V
Tbulb……………… 250 250 250 250 C

Rg1
with cathode bias
— —Pa + Pg2≤ 35W 0.47 MΩ
— —Pa +Pg2 > 35W 0.27 MΩ
with fixed bias
— —Pa +Pg2≤35W 0.22 MΩ
— —Pa +Pg2> 35W 0.10 MΩ

Direct Interelectrode Capacitances

— – – –triode connection and tetrode connection
input……… 16— -9.3 PF
output……… 12 — -17 PF
grid to plate……… 1.2 —-7.9 P

Static parameter

tetrode connection
Ua…………………250V
Ug2……………… 250V
a………………… 140mA
Ig2(approx)…… 3mA
-Ug1(approx)……15V
Gm………………… 12mA/V
ri …………………12KΩ
μg1-g2…………… 8

triode connection
Ua.g2……………250V
Ia+g2……………143mA
-Ug1(approx)… 15V
Gm…………………12mA/V
ri…………………670Ω
μ………………… 8

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